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t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 1 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com applications ? electronic warfare ? radar ? test instrumentation ? emc amplifier ordering information part eccn description tga25 7 6 - f s 3a001.b.2.a 2 .5 to 6 ghz 40w gan p a product features ? frequency range: 2.5 to 6 ghz ? p sat : 4 6 .5 dbm @ p in = 26 dbm ? pae : 3 5 % ? small signal gain: 29 db ? bias: pulse v d = 30 v, i d q = 1.55a , v g = ? 2 . 4 v typ pulse: pw = 150 u s, dc = 5% ? dimensions: 12.7 x 12.7 x 3.89 mm functional block diagram general description triquints tga2576 - fs is a packaged wideband power amplifier designed on triquints production 0.25 um gan on sic process . operating f rom 2.5 to 6 ghz, the tga2576 - fs achieves 40 w of saturated output power, greater than 35% power - added efficiency and 29 db small signal gain. both rf ports are f ully matched to 50 , the tga2576 - fs is ideally suited to support both c ommercial and defense related opportunities. lead - free and rohs compliant evaluation boards are available up on request. p in configuration p in no. symbol 1, 3, 5, 7, 8, 10, 12, 14 gnd 2, 6 v g 4 rf in 9, 13 v d 11 rf out
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 2 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com absolute maximum ratings parameter value drain voltage (v d ) 40 v gate voltage (v g ) ?5 to 0 v drain current (i d ) 50 00 ma gate current (i g ) ? 1 8 to 35 ma power dissipation (p diss , pulse ) 120 w rf input power , cw, 50 , t = 25c 28 dbm channel tremperature (t ch ) 275 c mounting temperature (30 seconds) 260 c storage temperature ?40 to 150 c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter value drain voltage (v d ) , pulsed : pw = 150 us, dc = 5%; not recommend for cw 30 v drain current (i d q ) 1550 ma drain current under rf drive (i d _ drive ) s ee plots p. 8 gate voltage (v g ) - 2.4 v typical temperature backside package ( t base ) - 40 0 c to 85 0 c (see t base derating plots p. 3 & p. 4 ) electrical specifications are measured at specified test conditions. specifications are not guaranteed over all operating conditions. electrical specifications test conditions unless otherwise noted: 25 c, v d = 30 v, i d q = 1 55 0 ma, pulsed: pw = 150 u s, dc = 5%, v g = ? 2 .4 v typical ; not recommend for cw parameter min typical max units operational frequency range 2.5 6 ghz small signal gain 29 db input return loss 15 db output return loss 10 db output power @ saturation (pin = 26 dbm) 46.5 dbm power - added efficiency (pin = 26 dbm) 35 % im3 @ pout/tone = 36 dbm - 15 dbc im5 @ pout/tone = 36 dbm - 30 dbc small signal gain temperature coefficient - 0.05 db/c output power temperature coefficient - 0.01 dbm/c
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 3 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com thermal and reliability information parameter test conditions value units thermal resistance ( jc ) (1) t base = 85c, v d = 30 v pulse pw = 150 us, dc = 10 % freq = 4 ghz, p in = 26 dbm: i dq = 1.5 a, i d_drive = 3.8 a p out = 46 dbm p diss = 74 w 1.31 oc/w channel temperature (t ch ) 182 c median lifetime (t m ) 6.6 x 10^7 hours notes: 1. m easured junction to package backside . test conditions: v d = 40v; failure criteria is 10% reduction in i d_max 1 e+ 04 1e+05 1e+06 1 e+ 07 1 e+ 08 1e+09 1e+10 1 e+ 11 1e+12 1 e+ 13 1e+14 1 e+ 15 1e+16 1 e+ 17 1 e+ 18 25 50 75 100 125 150 175 200 225 250 275 median lifetime, t m (hours) channel temperature, t ch ( ? c) median lifetime vs. channel temperature fet 13 1.0 1.1 1.2 1.3 1.4 1.5 1.6 50 55 60 65 70 75 80 85 r jc (c/w) p diss (w) thermal resistance vs. power dissipation pulse: 3 00 us, 5 % pulse: 100 us, 10 % pulse: 1 00 us, 30 % pulse: 300 us 10 % t base = 85 0 c pulse: 100 us, 5 % pulse: 300 us 30 % pulse: 150 us, 5 % 60 65 70 75 80 85 90 0 2 4 6 8 10 12 14 16 18 20 t base ( 0 c) p out, avg (w) temperature derating t base vs. p out, avg 2.5 & 3 ghz 4.0 ghz 5.0 ghz 6.0 ghz
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 4 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com thermal and reliability information (cont.) 20 30 40 50 60 70 80 90 100 2 3 4 5 6 7 8 p diss (w) frequency (ghz) power dissipation vs. frequency vs. t base + 85 c + 25 c ? 40 c pulsed v d = 30 v, i dq = 1.55 a, p in = 26 dbm, pw = 150 us, dc = 5 % 20 30 40 50 60 70 80 90 100 2 3 4 5 6 7 8 p diss (w) frequency (ghz) power dissipation vs. frequency vs. t base 30 v 28 v 25 v i dq = 1.55 a, p in = 26 dbm, pw = 150 us, dc = 5 % temp. = + 25 c 20 30 40 50 60 70 80 90 100 2 3 4 5 6 7 8 p diss (w) frequency (ghz) power dissipation vs. frequency vs. pulse v d = 30 v, i dq = 1.55 a, p in = 26 dbm temp. = + 25 c pw = 300 s, dc = 10 % pw = 600 s , dc = 20 % pw = 900 s, dc = 30 % pw = 150 s, dc = 5 % 20 30 40 50 60 70 80 90 100 10 12 14 16 18 20 22 24 26 p diss (w) input power (dbm) power dissipation vs. p in vs. frequency v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 % temp. = + 25 c 2.5 ghz 4.0 ghz 6.0 ghz 0 10 20 30 40 50 60 70 80 0 2 4 6 8 10 12 14 16 18 20 p out, peak (w) p out, avg (w) output power p peak vs. p out, avg vs. pulse dc = 30 % dc = 5 % dc = 10 % dc = 20 %
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 5 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com typical performance : small signal , cw -30 -25 -20 -15 -10 -5 0 2 3 4 5 6 7 8 s11 (db) frequency (ghz) input return loss vs. freq. vs. temp. +85 c +25 c ?40 c v d = 30 v, i dq = 1.55 a, v g = ? 2.4 v typ. -30 -25 -20 -15 -10 -5 0 2 3 4 5 6 7 8 s11 (db) frequency (ghz) input return loss vs. frequency vs. v d 25 v 30 v i dq = 1.55 a, v g = ? 2.4 v typ. temp. = +25 c -30 -25 -20 -15 -10 -5 0 2 3 4 5 6 7 8 s22 (db) frequency (ghz) output return loss vs. freq. vs. temp. +85 c +25 c ?40 c v d = 30 v, i dq = 1.55 a, v g = ? 2.4 v typ. -30 -25 -20 -15 -10 -5 0 2 3 4 5 6 7 8 s22 (db) frequency (ghz) output return loss vs. frequency vs. v d 25 v 30 v temp. = +25 c i dq = 1.55 a, v g = ? 2.4 v typ. 14 16 18 20 22 24 26 28 30 32 34 36 2 3 4 5 6 7 8 s21 (db) frequency (ghz) gain vs. frequency vs. temperature +85 c +25 c ?40 c v d = 30 v, i dq = 1.55 a, v g = ? 2.4 v typ. 14 16 18 20 22 24 26 28 30 32 34 36 2 3 4 5 6 7 8 s21 (db) frequency (ghz) gain vs. frequency vs. v d 25 v 30 v i dq = 1.55 a, v g = ? 2.4 v typ. temp. = +25 c
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 6 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com typical performance typical performance : large signal , pulse 40 41 42 43 44 45 46 47 48 49 2 3 4 5 6 7 8 output power (dbm) frequency (ghz) output power vs. frequency vs. pulse v d = 30 v, i dq = 1.55 a, p in = 26 dbm temp. = +25 c pw = 300 s, dc = 10 % pw = 600 s , dc = 20 % pw = 900 s, dc = 30 % pw = 150 s, dc = 5 % 30 32 34 36 38 40 42 44 46 48 50 2 3 4 5 6 7 8 output power (dbm) frequency (ghz) output power vs. freq. vs. temperature + 85 c + 25 c ? 40 c v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 %, p in = 26 dbm 30 32 34 36 38 40 42 44 46 48 50 2 3 4 5 6 7 8 output power (dbm) frequency (ghz) output power vs. freq. vs. input power v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 %, temp. = + 25 0 c 10 dbm 24 dbm 26 dbm 30 32 34 36 38 40 42 44 46 48 50 10 12 14 16 18 20 22 24 26 output power (dbm) input power (dbm) output power vs. input power vs. freq. 2.5 ghz 4.0 ghz 6.0 ghz v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 %, temp. = + 25 0 c 30 32 34 36 38 40 42 44 46 48 50 2 3 4 5 6 7 8 output power (dbm) frequency (ghz) output power vs. frequency vs. v d 25 v 28 v 30 v i dq = 1.55 a, pw = 150 s, dc = 5 %, p in = 26 dbm temp. = + 25 0 c
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 7 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com typical performance : large signal, pulse 0 5 10 15 20 25 30 35 40 45 50 55 60 2 3 4 5 6 7 8 power added efficiency (%) frequency (ghz) pae vs. frequency vs. pulse v d = 30 v, i dq = 1.55 a, p in = 26 dbm temp. = +25 c pw = 300 s, dc = 10 % pw = 600 s , dc = 20 % pw = 900 s, dc = 30 % pw = 150 s, dc = 5 % 0 5 10 15 20 25 30 35 40 45 50 55 60 2 3 4 5 6 7 8 power added efficiency (%) frequency (ghz) pae vs. frequency vs. temperature + 85 c + 25 c ? 40 c v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 %, p in = 26 dbm 0 5 10 15 20 25 30 35 40 45 50 55 60 2 3 4 5 6 7 8 power added efficiency (%) frequency (ghz) pae vs. frequency vs. input power 10 dbm 24 dbm 26 dbm v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 %, temp. = + 25 0 c 0 5 10 15 20 25 30 35 40 45 50 55 60 10 12 14 16 18 20 22 24 26 power added efficiency (%) input power (dbm) pae vs. input power vs. frequency 2.5 ghz 4.0 ghz 6.0 ghz v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 %, temp. = + 25 0 c 0 5 10 15 20 25 30 35 40 45 50 55 60 2 3 4 5 6 7 8 power added efficiency (%) frequency (ghz) pae vs. frequency vs. v d 25 v 28 v 30 v i dq = 1.55 a, pw = 150 s, dc = 5 %, p in = 26 dbm temp. = + 25 0 c
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 8 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com typical performance: large signal, pulse 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 2 3 4 5 6 7 8 drain current (ma) frequency (ghz) drain current vs. frequency vs. temp. +85 c +25 c ?40 c v d = 30 v, pw = 150 s, dc = 5 %, p in = 26 dbm 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 2 3 4 5 6 7 8 drain current (ma) frequency (ghz) drain current vs. frequency vs. pulse v d = 30 v, i dq = 1.55 a, p in = 26 dbm temp. = +25 c pw = 300 s, dc = 10 % pw = 600 s , dc = 20 % pw = 900 s, dc = 30 % pw = 150 s, dc = 5 % 0 5 10 15 20 25 30 35 2 3 4 5 6 7 8 power gain (db) frequency (ghz) power gain vs. freq. vs. input power 10 dbm 24 dbm 26 dbm v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 %, temp. = + 25 0 c 0 5 10 15 20 25 30 35 10 12 14 16 18 20 22 24 26 power gain (db) input power (dbm) power gain vs. input power vs. freq. 2.5 ghz 4.0 ghz 6.0 ghz v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 %, temp. = + 25 0 c -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2 3 4 5 6 7 8 gate current (ma) frequency (ghz) gate current vs. frequency vs. temp. + 85 c + 25 c ? 40 c v d = 30 v, i dq = 1.55 a, pw = 150 s, dc = 5 %, p in = 26 dbm 0 500 1000 1500 2000 2500 3000 3500 4000 4500 5000 10 12 14 16 18 20 22 24 26 drain current (ma) input power (dbm) drain current vs. input power vs. freq. v d = 30 v, pw = 150 s, dc = 5 % temp. = +25 c 2.5 ghz 4.0 ghz 6.0 ghz
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 9 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com typical performance : linearity, cw -40 -35 -30 -25 -20 -15 -10 -5 0 28 30 32 34 36 38 40 42 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. frequency v d = 30 v, i dq = 1.55 a, v g = ? 2.4 v typ., tone spacing = 10 mhz 2.5 ghz 4.0 ghz 5.0 ghz 6.0 ghz temp. = +25 c -40 -35 -30 -25 -20 -15 -10 -5 0 28 30 32 34 36 38 40 42 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. temperature v d = 30 v, i dq = 1.55 a, v g = ? 2.4 v typ., freq. = 4 ghz, tone spacing = 10 mhz +85 c +25 c ?40 c -80 -70 -60 -50 -40 -30 -20 -10 0 28 30 32 34 36 38 40 42 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. temperature v d = 30 v, i dq = 1.55 a, v g = ? 2.4 v typ., freq. = 4 ghz, tone spacing = 10 mhz +85 c +25 c ?40 c -80 -70 -60 -50 -40 -30 -20 -10 0 28 30 32 34 36 38 40 42 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. frequency v d = 30 v, i dq = 1.55 a, v g = ? 2.4 v typ., tone spacing = 10 mhz 2.5 ghz 4.0 ghz 5.0 ghz 6.0 ghz temp. = +25 c -40 -35 -30 -25 -20 -15 -10 -5 0 28 30 32 34 36 38 40 42 im3 (dbc) output power per tone (dbm) im3 vs. output power vs. v d 25 v 28 v 30 v i dq = 1.55 a, v g = ?2.4 v typ., freq. 4 ghz, tone spacing = 10 mhz -80 -70 -60 -50 -40 -30 -20 -10 0 28 30 32 34 36 38 40 42 im5 (dbc) output power per tone (dbm) im5 vs. output power vs. v d 25 v 28 v 30 v i dq = 1.55 a, v g = ?2.4 v typ., freq. 4 ghz, tone spacing = 10 mhz
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 10 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com typical performance (cont) -80 -70 -60 -50 -40 -30 -20 -10 0 30 35 40 45 50 2f 0 output power (dbc) fundamental output power (dbm) 2 nd harmonic vs. output power vs. freq. v d = 30 v, i dq = 1.55 a, v g = ?2.4 v typ. temp. = +25 c 4.0 ghz 2.5 ghz 3.0 ghz -80 -70 -60 -50 -40 -30 -20 -10 0 30 35 40 45 50 3f 0 output power (dbc) fundamental output power (dbm) 3 rd harmonic vs. output power vs. freq. v d = 30 v, i dq = 1.55 a, v g = ?2.4 v typ. temp. = +25 c 2.5 ghz 3.0 ghz
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 11 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com application circuit notes: 1. v g can be bia sed from either side (pin s 2 or 6 ) 2. v d must b e biased from both sides (pins 9 and 13 ) bias - up procedure 1. set power supply: i d limit to 5 a, i g limit to 10 ma 2. apply - 5.0 v to v g (for pinch - off) 3 . increase v d to +30v; ensure i d q < 1 0 ma 4 . adjust v g more positive until i dq , peak = 1.55 a ( i dq , avg = 77.5 ma for 5% duty cycle ); v g ~ - 2.4 v typ 5 . apply rf signal bias - down procedure 1. turn off rf signal 2. reduce v g to ?5.0 v; ensure i dq ~ 0 ma 3. reduce v d to 0 v or turn off the pulse generator to disable the v d modulator 4 . turn off v g suply rf in v g rf out v d (note 1) (note 2) 1 2 3 4 5 6 7 14 13 12 11 10 9 8 0.1uf 1uf c1 c5 0.1uf 1uf c2 c6
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 12 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com pin description pin symbol description 1 , 3, 5, 7, 8,10, 12, 14 gnd ground ; may be grounded or left open on pcb. 2 , 6 v g gate voltage (1) 4 rf in input; matched to 50 ; dc shorted to ground 9 , 13 v d drain voltage (2) ; pulsed operation (not recommend for cw) 11 rf out output; matched to 50 ; dc shorted to ground pa ckage base rf and dc ground. notes: 1. bias network is required; can b e biased from either side (pins 2 or 6 ); s ee application circuit on page 11 2. bias network is required; must be biased from both sides (pins 9 and 13 ) ; s ee application circuit on page 11
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 13 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com evaluation board layout recommend ed assembly evaluation board 1. a ttach pcb to c arrier using film epoxy (i.e ablefilm 5028e ) 2. attach tga2576 - fs to carrier using thermal compound or 4 mils indium shim and screws (0 - 80 x 0.125) 3. bond two w i res (0.001 dia.) from rf in (pin 4) to pcb; and three w ires from rf out (pin 11) to pcb ; ensure bond wires as short as possible 4. bond one w ire (0.001 dia.) from v g (pin 2 and/or pin 6) to pcb; and four wires from v d (pin 9 and pin 13) to pcb ; ensure bond wires as short as possible 5. attach 2x2 headers (i.e c - 146130 tyco electronics) using solder ( i.e sn62pb35/ag2 ) 6. attach connector (i.e sma 1092 - 01a - 5 southwest microwave) to clamp down pcb and carrier; launch connector pins needs to be aligned to pcb trace and to make contact to metal surface notes: to improve the thermal and thus rf performance, we recommend the following: 1. 1. if using temperature - controlled cold - plate: mount evaluation board to cold - plate using screws (2 - 26 x 0.125 ) at the 4 2. corner mounting holes 3. 2. if without cold - plate: attached a heat sink and fan to evaluation board using thermal compound or 4 mils indium 4. shim and screws (2 - 26 x 0.125) 5. 3. slide a thermocouple into the hole on the side of carrier for mo nitoring packaget base (if desired); the temperature 6. difference between thermocouple and t base is appx. 10 0 c typical ( for 20% duty cycle operation ) bill of material reference des. value description manuf. part number metal carrier, pcb download file at: www.triquint.com/products/p/tga2576 - fs various c2, c5 0.1 f cap, 0603, 50 v, 10 % , x7r various c3, c6 1 f cap, 1206, 50 v, 10%, x7r various gnd gnd v g v d gnd gnd v g v d pcb screw_0 - 80 x 0.125 (4 qty.) header (4 qty.) metal carrier connector (2 qty.) screw_2 - 56 x 0.125 (2 - 4 qyt.)
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 14 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com mechanical information marking: part number : tga2576 - fs year/week/serial number: yyww zzz batch id : m xxx notes: 1. unless specified otherwis e, dimensions are in inches . 2. unless specified o therwise, tolerances are 0.005 3. materials: package base material : copper (cu) package base finish: gold (au) 50 uin min over nickel (ni) 200 uin min package lid: lcp (liquid crystal polymer) bond pads (hatched): gold plate per astm b 488, typ e iii, grade a, class 1, 50 uin min
t ga2576 - f s 2.5 to 6ghz 40w gan power amplifier preliminary datasheet: rev b 1 - 08 - 1 5 - 15 of 15 - disclaimer: subject to change without notice ? 201 5 triquint www.triquint.com product compliance information esd sensitivity ratings caution! esd - sensitive device esd rating: class 1b value: 500v and <1000v test: human body model (hbm) standard: jedec standard jesd22 - a114 msl rating level 5a at +260 c convection reflow the part is rate d moisture sensitivity level 5a at 260c per jedec standard ipc/jedec j - std - 020. solderability this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce : 3a001.b.2.a contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information about triquint: web: www.triquint.com tel: +1. 972 . 994 . 8465 email: info - sales@triquint.com fax: +1. 972 . 994 . 8504 for technical questions and application information: email: info - products@triquint.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatsoever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provid ed "as is, where is" and with all faults, and the entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant informa tion before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with r egard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure w ould reasonably be expected to cause severe personal injury or death.

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